inchange semiconductor isc rf product specification isc silicon npn rf transistor BFS67 description low noise figure nf = 4.5 db typ. @v ce = 5 v, i c = 2 ma, f = 500 mhz high current-gain?bandwidth product ft= 1 ghz typ. @v ce = 5 v, i c = 2 ma, f = 500 mhz applications for a wide range of rf applicat ions such as: mixers and oscillators in tv tuners and rf communications equipment. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 25 v v ceo collector-emitter voltage 15 v v ebo emitter-base voltage 2.5 v i c collector current-continuous 25 ma i cm collector current-peak 50 ma p c collector power dissipation @t c =25 0.3 w t j junction temperature 150 t stg storage temperature range -65~150 isc website www.iscsemi.cn
inchange semiconductor isc rf product specification isc silicon npn rf transistor BFS67 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit i cbo collector cutoff current v cb = 10v; i e = 0 0.01 a h fe-1 dc current gain i c = 2ma ; v ce = 1v 25 h fe-2 dc current gain i c = 25ma ; v ce = 1v 25 f t current-gain?bandwidth product i c = 2ma ; v ce = 5v; f= 500mhz 1 ghz f t current-gain?bandwidth product i c = 25ma ; v ce = 5v; f= 500mhz 1.6 ghz c ob output capacitance i e = 0 ; v cb = 10v; f= 1mhz 0.8 1.5 pf c re feedback capacitance i c = 1ma ; v cb = 5v; f= 1mhz 0.65 pf nf noise figure i c = 2ma ; v ce = 5v;r s = 50 f= 500mhz 4.5 db isc website www.iscsemi.cn 2
inchange semiconductor isc rf product specification isc silicon npn rf transistor BFS67 isc website www.iscsemi.cn
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